target specification this is preliminary information on a new product foreseen to be developed. details are subject to change without notice. may 2007 rev 1 1/9 9 STW9N150 n-channel 1500v - 2.2 ? - 8a - to-247 very high voltage powermesh? power mosfet general features 100% avalanche tested avalanche ruggedness gate charge minimized very low intrinsic capacitances high speed switching very low on-resistance description using the well consolidated high voltage mesh overlay? process, stmicroelectronics has designed an advanced family of power mosfets with outstanding performances. the strengthened layout coupled with the company?s proprietary edge termination structure, gives the lowest r ds(on) per area, unrivalled gate charge and switching characteristics. applications switching application internal schematic diagram type v dss r ds(on) i d pw STW9N150 1500v < 2.7 ? 8a 350w to-247 www.st.com order code part number marking package packaging STW9N150 w9n150v to-247 tube
electrical ratings STW9N150 2/9 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 1500 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 8 a i d drain current (continuous) at t c = 100c 5 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 32 a p tot total dissipation at t c = 25c 350 w derating factor 0.37 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 2. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.36 c/w rthj-amb thermal resistance j unction-ambient max 62.5 c/w table 3. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) tbd a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) tbd mj
STW9N150 electrical characteristics 3/9 2 electrical characteristics (tcase =25c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 1500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125c 10 500 a a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 3 4 5 v r ds(on static drain-source on resistance v gs = 10v, i d = 1.3a 2.2 2.7 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 30v, i d = 2a tbd s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 3600 280 35 pf pf pf r g gate input resistance f=1mhz gate dc bias=0 test signal level=20mv open drain 2 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 600v, i d = 2.5a, v gs = 10v (see figure 2) 90 tbd tbd nc nc nc
electrical characteristics STW9N150 4/9 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 750v, i d = 2a, r g = 4.7 ?, v gs = 10v (see figure 1) tbd tbd tbd tbd ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 8 32 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 4a, v gs = 0 tbd v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4a, di/dt = 100a/s v dd = 45v tj = 25c (see figure 3) tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4a, di/dt = 100a/s v dd = 45v tj = 150c (see figure 3) tbd tbd tbd ns c a
STW9N150 test circuits 5/9 3 test circuits figure 1. switching times test circuit for resistive load figure 2. gate charge test circuit figure 3. test circuit for inductive load switching and diode recovery times figure 4. unclamped inductive load test circuit figure 5. unclamped inductive wavefo rm figure 6. switching time waveform
package mechanical data STW9N150 6/9 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
STW9N150 package mechanical data 7/9 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
revision history STW9N150 8/9 5 revision history table 8. revision history date revision changes 24-may-2007 1 first release
STW9N150 9/9 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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